A 7.1 GHz 170 W Solid-State Power Amplifier with 20-Way Combiner for Space Applications

Naoki HASEGAWA  Naoki SHINOHARA  Shigeo KAWASAKI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E99-C   No.10   pp.1140-1146
Publication Date: 2016/10/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E99.C.1140
Type of Manuscript: Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)
Category: 
Keyword: 
solid-state power amplifier,  GaN HEMT,  radial combiner and divider,  CW-drive,  

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Summary: 
The high performance GaN power amplifier circuit operating at 7.1 GHz was demonstrated for potential use such as in a space ground station. First, the GaN HEMT chips were investigated for the high power amplifier circuit design. And next, the designed amplifier circuits matching with the load and source impedance of the non-linear models were fabricated. From measurement, the AB-class power amplifier circuit with the four-cell chip showed the power added efficiency (PAE) of 42.6% and output power with 41.7dBm at -3dB gain compression. Finally, the good performance of the power amplifier was confirmed in a 20-way radial power combiner with the PAE of 17.4% and output power of 52.6 dBm at -3dB gain compression.