For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
A 7.1 GHz 170 W Solid-State Power Amplifier with 20-Way Combiner for Space Applications
Naoki HASEGAWA Naoki SHINOHARA Shigeo KAWASAKI
IEICE TRANSACTIONS on Electronics
Publication Date: 2016/10/01
Online ISSN: 1745-1353
Type of Manuscript: Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)
solid-state power amplifier, GaN HEMT, radial combiner and divider, CW-drive,
Full Text: PDF>>
The high performance GaN power amplifier circuit operating at 7.1 GHz was demonstrated for potential use such as in a space ground station. First, the GaN HEMT chips were investigated for the high power amplifier circuit design. And next, the designed amplifier circuits matching with the load and source impedance of the non-linear models were fabricated. From measurement, the AB-class power amplifier circuit with the four-cell chip showed the power added efficiency (PAE) of 42.6% and output power with 41.7dBm at -3dB gain compression. Finally, the good performance of the power amplifier was confirmed in a 20-way radial power combiner with the PAE of 17.4% and output power of 52.6 dBm at -3dB gain compression.