A 1.55-µm Waveband Optical Absorption Characterization of an Electro-Absorption Device with a Highly Stacked InAs/InGaAlAs Quantum Dot Structure

Naokatsu YAMAMOTO  Kouichi AKAHANE  Toshimasa UMEZAWA  Tetsuya KAWANISHI  

IEICE TRANSACTIONS on Electronics   Vol.E98-C   No.8   pp.878-881
Publication Date: 2015/08/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E98.C.878
Type of Manuscript: BRIEF PAPER
Category: MWP Device and Application
quantum dot,  electro-absorption,  optical modulator,  quantum confined stark effect,  waveguide device,  

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A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-µm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.