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A 1.55-µm Waveband Optical Absorption Characterization of an Electro-Absorption Device with a Highly Stacked InAs/InGaAlAs Quantum Dot Structure
Naokatsu YAMAMOTO Kouichi AKAHANE Toshimasa UMEZAWA Tetsuya KAWANISHI
IEICE TRANSACTIONS on Electronics
Publication Date: 2015/08/01
Online ISSN: 1745-1353
Type of Manuscript: BRIEF PAPER
Category: MWP Device and Application
quantum dot, electro-absorption, optical modulator, quantum confined stark effect, waveguide device,
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A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-µm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.