A 5-GHz Band WLAN SiGe HBT Power Amplifier IC with Novel Adaptive-Linearizing CMOS Bias Circuit

Xin YANG  Tsuyoshi SUGIURA  Norihisa OTANI  Tadamasa MURAKAMI  Eiichiro OTOBE  Toshihiko YOSHIMASU  

IEICE TRANSACTIONS on Electronics   Vol.E98-C    No.7    pp.651-658
Publication Date: 2015/07/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E98.C.651
Type of Manuscript: Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)
Category: Active Circuits/Devices/Monolithic Microwave Integrated Circuits
linear power amplifier,  adaptive-linearizing bias,  0.35µm SiGe BiCMOS,  EVM,  WLAN,  

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This paper presents a novel CMOS bias topology serving as not only a bias circuit but also an adaptive linearizer for SiGe HBT power amplifier (PA) IC. The novel bias circuit can well keep the base-to-emitter voltage (Vbe) of RF amplifying HBT constant and adaptively increase the base current (Ib) with the increase of the input power. Therefore, the gain compression and phase distortion performance of the PA is improved. A three-stage 5-GHz band PA IC with the novel bias circuit for WLAN applications is designed and fabricated in IBM 0.35µm SiGe BiCMOS technology. Under 54Mbps OFDM signal at 5.4GHz, the PA IC exhibits a measured small-signal gain of 29dB, an EVM of 0.9% at 17dBm output power and a DC current consumption of 284mA.