Evaluation of Accuracy of Charge Pumping Current in Time Domain

Tokinobu WATANABE  Masahiro HORI  Taiki SARUWATARI  Toshiaki TSUCHIYA  Yukinori ONO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E98-C   No.5   pp.390-394
Publication Date: 2015/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E98.C.390
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Charge pumping,  Time domain measurement,  Interface state density,  Electron capture,  Recombination,  

Full Text: PDF(3.3MB)>>
Buy this Article




Summary: 
Accuracy of a method for analyzing the interface defect properties; time-domain charge pumping method, is evaluated. The method monitors the charge pumping (CP) current in time domain, and thus we expect that it gives us a noble way to investigate the interface state properties. In this study, for the purpose of evaluating the accuracy of the method, the interface state density extracted from the time-domain data is compared with that measured using the conventional CP method. The results show that they are equal to each other for all measured devices with various defect densities, demonstrating that the time-domain CP method is sufficiently accurate for the defect density evaluation.