Fabrication of Step-Edge Vertical-Channel Organic Transistors by Selective Electro-Spray Deposition

Hiroshi YAMAUCHI  Shigekazu KUNIYOSHI  Masatoshi SAKAI  Kazuhiro KUDO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E98-C   No.2   pp.80-85
Publication Date: 2015/02/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E98.C.80
Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Organic Molecular Electronics)
Category: 
Keyword: 
organic field-effect transistor,  vertical channel transistor,  TIPS-pentacene,  electrospray deposition,  

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Summary: 
Step-edge vertical channel organic field-effect transistors (SVC-OFETs) with a very short channel have been fabricated by a novel selective electrospray deposition (SESD) method. We propose the SESD method for the fabrication of SVC-OFETs based on a 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) semiconductor layer formed by SESD. In the SESD method, an electric field is applied between the nozzle and selective patterned electrodes on a substrate. We demonstrated that the solution accumulates on the selected electrode pattern by controlling the voltage applied to the electrode.