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Fabrication of Step-Edge Vertical-Channel Organic Transistors by Selective Electro-Spray Deposition
Hiroshi YAMAUCHI Shigekazu KUNIYOSHI Masatoshi SAKAI Kazuhiro KUDO
IEICE TRANSACTIONS on Electronics
Publication Date: 2015/02/01
Online ISSN: 1745-1353
Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Organic Molecular Electronics)
organic field-effect transistor, vertical channel transistor, TIPS-pentacene, electrospray deposition,
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Step-edge vertical channel organic field-effect transistors (SVC-OFETs) with a very short channel have been fabricated by a novel selective electrospray deposition (SESD) method. We propose the SESD method for the fabrication of SVC-OFETs based on a 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) semiconductor layer formed by SESD. In the SESD method, an electric field is applied between the nozzle and selective patterned electrodes on a substrate. We demonstrated that the solution accumulates on the selected electrode pattern by controlling the voltage applied to the electrode.