Influence of Polymer Gate Dielectrics on p-Channel and n-Channel Formation of Fluorene-type Polymer Light-emitting Transistors

Hirotake KAJII  Masato ISE  Hitoshi TANAKA  Takahiro OHTOMO  Yutaka OHMORI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E98-C   No.2   pp.139-142
Publication Date: 2015/02/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E98.C.139
Type of Manuscript: BRIEF PAPER
Category: 
Keyword: 
polymer light-emitting transistor,  polyfluorene,  ambipolar transport,  gate dielectric,  

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Summary: 
The effects of the gate dielectrics on ambipolar transport in top-gate-type polymer light-emitting transistors with single-layer and bilayer gate dielectrics are investigated. Hole field-effect mobility is dependent on the dielectric constant of the gate dielectric onto the active layer. Hole transport of devices is affected by the dipolar disorder in the first gate dielectric layer on the active layer. Electron threshold voltage tends to decrease with increasing the total stacked gate capacitance.