Influence of Polymer Gate Dielectrics on p-Channel and n-Channel Formation of Fluorene-type Polymer Light-emitting Transistors

Hirotake KAJII
Masato ISE
Hitoshi TANAKA
Takahiro OHTOMO

IEICE TRANSACTIONS on Electronics   Vol.E98-C    No.2    pp.139-142
Publication Date: 2015/02/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E98.C.139
Type of Manuscript: BRIEF PAPER
polymer light-emitting transistor,  polyfluorene,  ambipolar transport,  gate dielectric,  

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The effects of the gate dielectrics on ambipolar transport in top-gate-type polymer light-emitting transistors with single-layer and bilayer gate dielectrics are investigated. Hole field-effect mobility is dependent on the dielectric constant of the gate dielectric onto the active layer. Hole transport of devices is affected by the dipolar disorder in the first gate dielectric layer on the active layer. Electron threshold voltage tends to decrease with increasing the total stacked gate capacitance.