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Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis
Shoichi SHIBA Masaru SATO Hiroshi MATSUMURA Yoichi KAWANO Tsuyoshi TAKAHASHI Toshihide SUZUKI Yasuhiro NAKASHA Taisuke IWAI Naoki HARA
IEICE TRANSACTIONS on Electronics
Publication Date: 2015/12/01
Online ISSN: 1745-1353
Type of Manuscript: Special Section PAPER (Special Section on Terahertz Waves Coming to the Real World)
millimeter-wave, InP HEMTs, fundamental mixer, flip chip, waveguide module, spectrum analysis,
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A wide-bandwidth fundamental mixer operating at a frequency above 110GHz for precise spectrum analysis was developed using the InP HEMT technology. A single-ended resistive mixer was adopted for the mixer circuit. An IF amplifier and LO buffer amplifier were also developed and integrated into the mixer chip. As for packaging into a metal block module, a flip-chip bonding technique was introduced. Compared to face-up mounting with wire connections, flip-chip bonding exhibited good frequency flatness in signal loss. The mixer module with a built-in IF amplifier achieved a conversion gain of 5dB at an RF frequency of 135GHz and a 3-dB bandwidth of 35GHz. The mixer module with an LO buffer amplifier operated well even at an LO power of -20dBm.