For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Low Loss Intelligent Power Module with TFS-IGBTs and SiC SBDs
Qing HUA Zehong LI Bo ZHANG
IEICE TRANSACTIONS on Electronics
Publication Date: 2015/10/01
Online ISSN: 1745-1353
Type of Manuscript: BRIEF PAPER
Category: Electronic Circuits
power module, SiC, power loss, inverter,
Full Text: PDF(630.4KB)>>
A low loss intelligent power module (IPM) that specifically designed for high performance frequency-alterable air conditioner applications is proposed. This IPM utilizes 600 V trench gate field stop insulated gate bipolar transistors (TFS-IGBTs) as the main switching devices to deliver extremely low conduction and switching losses. In addition, 600 V SiC schottky barrier diodes (SBDs) are employed as the freewheeling diodes. Compared to conventional silicon fast recovery diodes (FRDs) SiC SBDs exhibit practically no reverse recovery loss, hence can further reduce the power loss of the IPM. Experimental results reveal that the power loss of the proposed IPM is between 3.5∼21.7 W at different compressor frequencies from 10 to 70 Hz, which achieving up to 12.5%∼25.5% improvement when compared to the state-of-the-art conventional Si-based IGBT IPM.