Calculate Very Fast Transient Current by the Inverse Operation of the Transient Electromagnetic Near Field due to Switch Operation in Gas Insulated Switchgear

Weifeng XIN  Guogang ZHANG  Jianqiang WANG  Kai LIU  Yingsan GENG  Mingzhe RONG  

IEICE TRANSACTIONS on Electronics   Vol.E97-C    No.9    pp.888-893
Publication Date: 2014/09/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E97.C.888
Type of Manuscript: Special Section PAPER (Special Section on Recent Development of Electro-Mechanical Devices (IS-EMD2013))
VFTC,  TGPR,  GIS,  coefficient matrix,  EM field,  

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For the direct measurement of very fast transient current (VFTC) due to switch operation in gas insulated switchgear (GIS), usually it will interfere the original operation or change the structure of switch. In this paper a method for calculation of transient current caused by the disconnect operation in GIS by the inverse operation of the electromagnetic (EM) near field is presented. A GIS is modeled by the finite integration technique (FIT), and all the media between the excitation source and the observation position are considered as a black box whose input is VFTC and output is EM field. A coefficient matrix is established to reflect the connection between the input and output in frequency domain, and the VFTC in frequency domain will be the result of multiplying the inverse matrix by the measurement result minus the EM field caused by transient grounding potential rise (TGPR) or transient enclosure voltage (TEV) in the observation position. Finally the time domain form of VFTC can be obtained by the interpolation and IFFT. Comparison between the result and simulation shows the validation of this method.