A High Output Resistance 1.2-V VDD Current Mirror with Deep Submicron Vertical MOSFETs

Satoru TANOI  Tetsuo ENDOH  

IEICE TRANSACTIONS on Electronics   Vol.E97-C   No.5   pp.423-430
Publication Date: 2014/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E97.C.423
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
current mirror,  low VDD,  vertical MOSFET,  output resistance,  short channel effect,  

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A low VDD current mirror with deep sub-micron vertical MOSFETs is presented. The keys are new bias circuits to reduce both the minimum VDD for the operation and the sensitivity of the output current on VDD. In the simulation, our circuits reduce the minimum VDD by about 17% and the VDD sensitivity by one order both from those of the conventional. In the simulation with 90nm φ vertical MOSFET approximate models, our circuit shows about 4MΩ output resistance at 1.2-V VDD with the small temperature dependence, which is about six times as large as that with planar MOSFETs.