Delay Time Component of InGaAs MOSFET Caused by Dynamic Source Resistance

Masayuki YAMADA  Ken UCHIDA  Yasuyuki MIYAMOTO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E97-C   No.5   pp.419-422
Publication Date: 2014/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E97.C.419
Type of Manuscript: BRIEF PAPER
Category: 
Keyword: 
InGaAs,  MOSFET,  dynamic source resistance,  delay component,  

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Summary: 
The delay time component (τs) of an InGaAs MOSFET caused by dynamic source resistance is discussed. On the basis of the relationship between the current density (J) and the dynamic source resistance (rs), the value of rs is proportional to 1/J with some offset at low current densities, whereas the offset becomes smaller in a region of high current density. The value of τs depends on the current in a way similar to rs. Because the offset in the high-current-density region is proportional to the square root of the effective mass, an InGaAs MOSFET with a small mass has a shorter rs than a Si MOSFET.