High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy

Katsunori MAKIHARA
Mitsuhisa IKEDA
Hirokazu KAKI

IEICE TRANSACTIONS on Electronics   Vol.E97-C    No.5    pp.397-400
Publication Date: 2014/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E97.C.397
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Si nano-columnar structure,  AFM,  current image,  electron emission,  

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We fabricated highly dense Si nano-columnar structures accompanied with Si nanocrystals on W-coated quartz and characterized their local electrical transport in the thickness direction in a non-contact mode by using a Rh-coated Si cantilever with pulse bias application, in which Vmax, Vmin, and the duty ratio were set at +3.0V, -14V, and 50%, respectively. By applying a pulse bias to the bottom W electrode with respect to a grounded top electrode made of ∼10-nm-thick Au on a sample surface, non-uniform current images in correlation with surface morphologies reflecting electron emission were obtained. The change in the surface potential of the highly dense Si nano-columnar structures accompanied with Si nanocrystals, which were measured at room temperature by using an AFM/Kelvin probe technique, indicated electron injection into and extraction from Si nanocrystals, depending on the tip bias polarity. This result is attributable to efficient electron emission under pulsed bias application due to electron charging from the top electrode to the Si nanocrystals in a positively biased duration at the bottom electrode and subsequent quasi-ballistic transport through Si nanocrystals in a negatively biased duration.