Past and Future Technology for Mixed Signal LSI

Kenichi HATASAKO  Tetsuya NITTA  Masami HANE  Shigeto MAEGAWA  

IEICE TRANSACTIONS on Electronics   Vol.E97-C    No.4    pp.238-244
Publication Date: 2014/04/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E97.C.238
Type of Manuscript: Special Section INVITED PAPER (Special Section on Solid-State Circuit Design,---,Architecture, Circuit, Device and Design Methodology)
Mixed Signal LSI,  BiC-DMOS,  analog,  power IC,  InGaZnO (IGZO),  

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This paper discusses Mixed Signal LSI technology with embedded power transistors. Trends in Mixed Signal LSI technology are explained at first. Mixed signal LSI technology has proceeded with the help of fine fabrication technology and SOI technology. The BEOL transistor is a new development, which uses InGaZnO (IGZO) as its TFT channel material. The BEOL transistor is one future device which enables 3D IC and chip shrinking technology.