A Method for Measuring of RTN by Boosting Word-Line Voltage in 6-Tr-SRAMs

Goichi ONO  Yuki MORI  Michiaki NAKAYAMA  Yusuke KANNO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E97-C   No.3   pp.215-221
Publication Date: 2014/03/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E97.C.215
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Integrated Electronics
Keyword: 
random telegraph noise,  static random access memory,  

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Summary: 
In order to analyze an impact of threshold voltage (Vth) fluctuation induced by random telegraph noise (RTN) on LSI circuit design, we measured a 40-nm 6-Tr-SRAM TEG which enables to evaluate individual bit-line current. RTN phenomenon was successfully measured and we also identified that the transfer MOSFET in an SRAM bit-cell was the most sensitive MOSFET. The proposed word line boosting technique, which applies slightly extra stress to the transfer MOSFET, improves about 30% of detecting probability of fail-bit cells caused by RTN.