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A Method for Measuring of RTN by Boosting Word-Line Voltage in 6-Tr-SRAMs
Goichi ONO Yuki MORI Michiaki NAKAYAMA Yusuke KANNO
IEICE TRANSACTIONS on Electronics
Publication Date: 2014/03/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Integrated Electronics
random telegraph noise, static random access memory,
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In order to analyze an impact of threshold voltage (Vth) fluctuation induced by random telegraph noise (RTN) on LSI circuit design, we measured a 40-nm 6-Tr-SRAM TEG which enables to evaluate individual bit-line current. RTN phenomenon was successfully measured and we also identified that the transfer MOSFET in an SRAM bit-cell was the most sensitive MOSFET. The proposed word line boosting technique, which applies slightly extra stress to the transfer MOSFET, improves about 30% of detecting probability of fail-bit cells caused by RTN.