Improvement of Hump Phenomenon of Thin-Film Transistor by SiNX Film

Takahiro KOBAYASHI
Naoto MATSUO
Akira HEYA
Shin YOKOYAMA

Publication
IEICE TRANSACTIONS on Electronics   Vol.E97-C    No.11    pp.1112-1116
Publication Date: 2014/11/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E97.C.1112
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
TFT,  SiNX film,  fixed charge,  hump phenomenon,  

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Summary: 
It is clarified that the SiNX film with a thickness of 1.7 nm, which was formed at the interface between the poly-Si source/drain and Al layer, suppresses the hump phenomenon of TFT with a channel length of 10 μm. The mechanism of the hump suppression by this structure is discussed. It is thought that the fixed charge in the SiNX film suppresses the formation of the parasitic channel in the poly-Si edge by the Coulomb repulsion.