In-line Process Monitoring for Amorphous Oxide Semiconductor TFT Fabrication using Microwave-detected Photoconductivity Decay Technique

Hiroshi GOTO  Hiroaki TAO  Shinya MORITA  Yasuyuki TAKANASHI  Aya HINO  Tomoya KISHI  Mototaka OCHI  Kazushi HAYASHI  Toshihiro KUGIMIYA  

IEICE TRANSACTIONS on Electronics   Vol.E97-C   No.11   pp.1055-1062
Publication Date: 2014/11/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E97.C.1055
Type of Manuscript: INVITED PAPER (Special Section on Electronic Displays)
oxide semiconductor,  thin film transistor,  microwave-detected photoconductivity decay,  in-line process monitoring,  

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We have investigated the microwave-detected photoconductivity responses from the amorphous In--Ga--Zn--O (a-IGZO) thin films. The time constant extracted by the slope of the slow part of the reflectivity signals are correlated with TFT performances. We have evaluated the influences of the sputtering conditions on the quality of a-IGZO thin film, as well as the influences of gate insulation films and annealing conditions, by comparing the TFT characteristics with the microwave photoconductivity decay (μ-PCD). It is concluded that the μ-PCD is a promising method for in-line process monitoring for the IGZO-TFTs fabrication.