Millimeter-Wave GaN HEMT for Power Amplifier Applications

Kazukiyo JOSHIN  Kozo MAKIYAMA  Shiro OZAKI  Toshihiro OHKI  Naoya OKAMOTO  Yoshitaka NIIDA  Masaru SATO  Satoshi MASUDA  Keiji WATANABE  

IEICE TRANSACTIONS on Electronics   Vol.E97-C   No.10   pp.923-929
Publication Date: 2014/10/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E97.C.923
Type of Manuscript: INVITED PAPER (Special Section on Recent Progress in Microwave and Millimeter-wave Technologies)
GaN HEMT,  Millimeter-wave,  Power amplifier,  Device modeling,  

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Gallium nitride high electron mobility transistors (GaN HEMTs) were developed for millimeter-wave high power amplifier applications. The device with a gate length of 80 nm and an InAlN barrier layer exhibited high drain current of more than 1.2 A/mm and high breakdown voltage of 73 V. A cut-off frequency fT of 113 GHz and maximum oscillation frequency fmax of 230 GHz were achieved. The output power density reached 1 W/mm with a linear gain of 6.4 dB at load-pull measurements at 90 GHz. And we extracted equivalent circuit model parameters of the millimeter-wave InAlN/GaN HEMT and showed that the model was useful in simulating the millimeter-wave power performance. Also, we report a preliminary constant bias stress test result.