SOI CMOS Voltage Multiplier Circuits with Body Bias Control Technique for Battery-Less Wireless Sensor System

Yasushi IGARASHI  Tadashi CHIBA  Shin-ichi O'UCHI  Meishoku MASAHARA  Kunihiro SAKAMOTO  

Publication
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences   Vol.E97-A   No.3   pp.741-748
Publication Date: 2014/03/01
Online ISSN: 1745-1337
DOI: 10.1587/transfun.E97.A.741
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
Category: 
Keyword: 
voltage multiplier,  RF-to-DC converter,  SOI MOSFET,  self-control of body bias,  

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Summary: 
Voltage multiplier (VM) circuits for RF (2.45GHz)-to-DC conversion are developed for battery-less sensor nodes. Converted DC power is charged on a storage capacitor before driving a wireless sensor module. A charging time of the storage capacitor of the proposed VM circuits is reduced 1/10 of the conventional VM circuits, because they have constant current characteristics owing to self-control of body bias in diode-connected SOI MOSFETs. The wireless sensor system composed of the fabricated VM chip and a commercially available sensor module is operated using an RF signal of a wireless LAN modem (2.45GHz) as a power source.