VCCS Models of DPLEDMOS for PDP Data Driver IC

Guohuan HUA  Hualong ZHUANG  Shen XU  Weifeng SUN  Zhiqun LI  

IEICE TRANSACTIONS on Electronics   Vol.E96-C   No.8   pp.1061-1067
Publication Date: 2013/08/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E96.C.1061
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
VCCS model,  ERC efficiency,  PDP data driver IC,  DPLEDMOS,  

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Two voltage controlled current source (VCCS) models of double-channel p-type lateral extended drain MOS (DPLEDMOS) are firstly proposed to analyze the energy recovery circuit (ERC) efficiency of PDP data driver IC. In terms of the mathematical function between ID and VDS, the VCCS models are created. The presented models can be embedded in system software Saber to simulate the ERC waveform of data driver IC. A test board and a PDP system are used to verify the accuracy of the VCCS models. The experimental measurements agree with the simulation results very well and the maximum model error is 3.89%. Simulation results also show that the ERC efficiency of PDP data driver IC is influenced by three factors: the value of charge time TERC, the drain current ID, and the capacitance of CL. In an actual PDP system, TERC is restricted and CL is changeless. The ERC efficiency of PDP data driver IC can be improved significantly by using DPLEDMOS which has higher ID capacity. The proposed VCCS models of DPLEDMOS can be used to predict the ERC efficiency accurately.