Equivalent Circuit Representation of Silicon Substrate Coupling of Passive and Active RF Components

Naoya AZUMA  Makoto NAGATA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E96-C   No.6   pp.875-883
Publication Date: 2013/06/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E96.C.875
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
mixed signal VLSI circuit,  substrate crosstalk,  power integrity,  substrate network model,  

Full Text: PDF>>
Buy this Article




Summary: 
Substrate coupling of radio frequency (RF) components is represented by equivalent circuits unifying a resistive mesh network with lumped capacitors in connection with the backside of device models. Two-port S-parameter test structures are used to characterize the strength of substrate coupling of resistors, capacitors, inductors, and MOSFETs in a 65 nm CMOS technology with different geometries and dimensions. The consistency is finely demonstrated between simulation with the equivalent circuits and measurements of the test structures, with the deviation of typically less than 3 dB for passive and 6 dB for active components, in the transmission properties for the frequency range of interest up to 8 GHz.