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A 60 GHz Power Amplifier with 10 GHz 1-dB Bandwidth and 13.6% PAE in 65 nm CMOS
Tong WANG Toshiya MITOMO Naoko ONO Shigehito SAIGUSA Osamu WATANABE
IEICE TRANSACTIONS on Electronics
Publication Date: 2013/06/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
broadband amplifiers, millimeter wave integrated circuits, power amplifiers,
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A four-stage power amplifier (PA) with 10 GHz 1-dB bandwidth (56–66 GHz) is presented. The broadband performance is achieved owing to π-section interstage matching network. Three-stage-current-reuse topology is proposed to enhance efficiency. The amplifier has been fabricated in 65 nm digital CMOS. 18 dB power gain and 9.6 dBm saturated power (Psat) are achieved at 60 GHz. The PA consumes current of 50 mA at 1.2 V supply voltage, and has a peak power-added efficiency (PAE) of 13.6%. To the best of the authors' knowledge, this work shows the highest PAE among the reported CMOS PAs that covers the worldwide 9 GHz ISM millimeter-wave band with less-than-1.2 V supply voltage.