Characterization of Local Electronic Transport through Ultrathin Au/Highly-Dense Si Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy

Daichi TAKEUCHI
Katsunori MAKIHARA
Mitsuhisa IKEDA
Seiichi MIYAZAKI
Hirokazu KAKI
Tsukasa HAYASHI

Publication
IEICE TRANSACTIONS on Electronics   Vol.E96-C    No.5    pp.718-721
Publication Date: 2013/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E96.C.718
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si nanocolumnar structure,  AFM,  current image,  electron emission,  

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Summary: 
We have fabricated highly-dense Si nano-columnar structures accompanied with Si nanocrystals on W-coated quartz, and characterized their local electrical transport in the thickness direction using atomic force microscopy (AFM) with a conductive cantilever. By applying DC negative bias to the bottom W electrode with respect to a grounded top electrode made of 10-nm-thick Au on the sample surface, current images reflecting highly-localized conduction were obtained in both contact and non-contact modes. This result is attributable to electron emission due to quasi-ballistic transport through Si nanocrystals via nanocolumnar structure.