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Fabrication of β-FeSi2 Films on Si(111) Using Solid-Phase Growth Reaction from Fe and FeSi Sources
Katsuaki MOMIYAMA Kensaku KANOMATA Shigeru KUBOTA Fumihiko HIROSE
IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: BRIEF PAPER
β-FeSi2, silicide, solid phase growth, RHEED,
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We investigated solid-phase growth reactions for the fabrication of β-FeSi2 films from Fe and FeSi sources by reflection high-energy electron diffraction (RHEED). To enhance the interdiffusion of Fe and Si for the growth of β-FeSi2, the use of FeSi instead of pure Fe as the source for the initial deposition was examined. The RHEED observation during the solid phase reaction indicated that the growth temperature was markedly decreased to 390 K using the FeSi source. We discuss the reaction mechanism of the solid phase growth of β-FeSi2 from Fe and FeSi sources in this paper.