Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment

Takuma NAKANO  Masamichi AKAZAWA  

IEICE TRANSACTIONS on Electronics   Vol.E96-C   No.5   pp.686-689
Publication Date: 2013/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E96.C.686
Print ISSN: 0916-8516
Type of Manuscript: BRIEF PAPER
InAlN,  XPS,  surface treatment,  HF,  native oxide,  

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We investigated the effects of chemical treatments for removing native oxide layers on InAlN surfaces by X-ray photoelectron spectroscopy (XPS). The untreated surface of the air exposed InAlN layer was covered with the native oxide layer mainly composed of hydroxides. Hydrochloric acid treatment and ammonium hydroxide treatment were not efficient for removing the native oxide layer even after immersion for 15 min, while hydrofluoric acid (HF) treatment led to a removal in a short treatment time of 1 min. After the HF treatment, the surface was prevented from reoxidation in air for 1 h. We also found that the 5-min buffered HF treatment had almost the same effect as the 1-min HF treatment. Finally, an attempt was made to apply the HF-based treatment to the metal-InAlN contact to confirm the XPS results.