X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures

Akio OHTA
Katsunori MAKIHARA
Seiichi MIYAZAKI
Masao SAKURABA
Junichi MUROTA

Publication
IEICE TRANSACTIONS on Electronics   Vol.E96-C    No.5    pp.680-685
Publication Date: 2013/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E96.C.680
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
silicon germanium,  heterostructure,  chemical bonding features,  valence band alignment,  X-ray photoelectron spectroscopy,  

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Summary: 
An SiO2/Si-cap/Si0.55Ge0.45 heterostructure was fabricated on p-type Si(100) and strained silicon on insulator (SOI) substrates by low pressure chemical vapor deposition (LPCVD) and subsequent thermal oxidation in an O2 + H2 gas mixture. Chemical bonding features and valence band offsets in the heterostructures were evaluated by using high-resolution x-ray photoelectron spectroscopy (XPS) measurements and thinning the stack layers with a wet chemical solution.