Novel PNP BJT Structure to Improve Matching Characteristics for Analog and Mixed Signal Integrated Circuit Applications

Seon-Man HWANG  Yi-Jung JUNG  Hyuk-Min KWON  Jae-Hyung JANG  Ho-Young KWAK  Sung-Kyu KWON  Seung-Yong SUNG  Jong-Kwan SHIN  Yi-Sun CHUNG  Da-Soon LEE  Hi-Deok LEE  

IEICE TRANSACTIONS on Electronics   Vol.E96-C    No.5    pp.663-668
Publication Date: 2013/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E96.C.663
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
bipolar junction transistor (BJT),  matching,  analog application,  matching coefficient,  

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In this paper, we suggest a novel pnp BJT structure to improve the matching characteristics of the bipolar junction transistor (BJT) which is fabricated using standard CMOS process. In the case of electrical characteristics, the collector current density Jc of the proposed structure (T2) is a little greater than the conventional structure (T1), which contributes to the greater current gain β of the proposed structure than the conventional structure. Although the matching characteristics of the collector current density of the proposed structure is almost similar to the conventional structure, that of the current gain of the proposed structure is better than the conventional structure about 14.81% due to the better matching characteristics of the base current density of the proposed structure about 59.34%. Therefore, the proposed BJT structure is desirable for high performance analog/digital mixed signal application.