A High Performance Current Latch Sense Amplifier with Vertical MOSFET

Hyoungjun NA  Tetsuo ENDOH  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E96-C   No.5   pp.655-662
Publication Date: 2013/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E96.C.655
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
current latch sense amplifier,  vertical MOSFET,  SRAM,  sensing time,  speed,  current,  voltage gain,  stability,  yield,  circuit area,  

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Summary: 
In this paper, a high performance current latch sense amplifier (CLSA) with vertical MOSFET is proposed, and its performances are investigated. The proposed CLSA with the vertical MOSFET realizes a 11% faster sensing time with about 3% smaller current consumption relative to the conventional CLSA with the planar MOSFET. Moreover, the proposed CLSA with the vertical MOSFET achieves an 1.11 dB increased voltage gain G(f) relative to the conventional CLSA with the planar MOSFET. Furthermore, the proposed CLSA realizes up to about 1.7% larger yield than the conventional CLSA, and its circuit area is 42% smaller than the conventional CLSA.