L-Shaped Tunneling Field-Effect Transistors for Complementary Logic Applications

Sang Wan KIM  Woo Young CHOI  Min-Chul SUN  Hyun Woo KIM  Jong-Ho LEE  Hyungcheol SHIN  Byung-Gook PARK  

IEICE TRANSACTIONS on Electronics   Vol.E96-C    No.5    pp.634-638
Publication Date: 2013/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E96.C.634
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
L-shaped TFETs,  subthreshold swing,  steep slope,  complementary logic function,  

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In order to implement complementary logic function with L-shaped tunneling field-effect transistors (TFETs), current drivability and subthreshold swing (SS) need to be improved more. For this purpose, high-k material such as hafnium dioxide (HfO2) has been used as gate dielectric rather than silicon dioxide (SiO2). The effects of device parameters on performance have been investigated and the design of L-shaped TFETs has been optimized. Finally, the performance of L-shaped TFET inverters have been compared with that of conventional TFET ones.