Statistical Analysis of Current Onset Voltage (COV) Distribution of Scaled MOSFETs

Tomoko MIZUTANI  Anil KUMAR  Toshiro HIRAMOTO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E96-C   No.5   pp.630-633
Publication Date: 2013/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E96.C.630
Print ISSN: 0916-8516
Type of Manuscript: BRIEF PAPER
Category: 
Keyword: 
variability,  MOS transistor,  threshold voltage,  DIBL,  normal distribution,  Gumbel distribution,  

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Summary: 
Distribution of current onset voltage (COV) as well as threshold voltage (VTH) and drain induced barrier lowering (DIBL) in MOSFETs fabricated by 65 nm technology is statistically analyzed. Although VTH distribution follows the normal distribution, COV and DIBL deviate from the normal distribution. It is newly found that COV follows the Gumbel distribution, which is known as one of the extreme value distributions. This result of statistical COV analysis supports our model that COV is mainly determined by the deepest potential valley between source and drain.