Effects of Fluorine Implantation on 1/f Noise, Hot Carrier and NBTI Reliability of MOSFETs

Jae-Hyung JANG  Hyuk-Min KWON  Ho-Young KWAK  Sung-Kyu KWON  Seon-Man HWANG  Jong-Kwan SHIN  Seung-Yong SUNG  Yi-Sun CHUNG  Da-Soon LEE  Hi-Deok LEE  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E96-C   No.5   pp.624-629
Publication Date: 2013/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E96.C.624
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
fluorine,  flicker noise,  1/f noise,  reliability,  hot-carrier,  NBTI,  MOSFET,  

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Summary: 
The effects of fluorine implantation on flicker noise and reliability of NMOSFET and PMOSFETs were concurrently investigated. The flicker noise of an NMOSFET was decreased about 66% by fluorine implantation, and that of a PMOSET was decreased about 76%. As indicated by the results, fluorine implantation is one of the methods that can be used to improve the noise characteristics of MOSFET devices. However, hot-carrier degradation was enhanced by fluorine implantation in NMOSFETs, which can be related to the difference of molecular binding within the gate oxide. On the contrary, in case of PMOSFETs, NBTI life time was increased by fluorine implantation. Therefore, concurrent investigation of hot-carrier and NBTI reliability and flicker noise is necessary in developing MOSFETs for analog/digital mixed signal applications.