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A Radiation-Hard Redundant Flip-Flop to Suppress Multiple Cell Upset by Utilizing the Parasitic Bipolar Effect
Kuiyuan ZHANG Jun FURUTA Ryosuke YAMAMOTO Kazutoshi KOBAYASHI Hidetoshi ONODERA
IEICE TRANSACTIONS on Electronics
Publication Date: 2013/04/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology)
DMR, soft error, MCU, device simulation,
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According to the process scaling, radiation-hard devices are becoming sensitive to soft errors caused by Multiple Cell Upset (MCUs). In this paper, the parasitic bipolar effects are utilized to suppress MCUs of the radiation-hard dual-modular flip-flops. Device simulations reveal that a simultaneous flip of redundant latches is suppressed by storing opposite values instead of storing the same value due to its asymmetrical structure. The state of latches becomes a specific value after a particle hit due to the bipolar effects. Spallation neutron irradiation proves that MCUs are effectively suppressed in the D-FF arrays in which adjacent two latches in different FFs store opposite values. The redundant latch structure storing the opposite values is robust to the simultaneous flip.