Independent-Double-Gate FinFET SRAM Technology

Kazuhiko ENDO  Shin-ichi OUCHI  Takashi MATSUKAWA  Yongxun LIU  Meishoku MASAHARA  

IEICE TRANSACTIONS on Electronics   Vol.E96-C    No.4    pp.413-423
Publication Date: 2013/04/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E96.C.413
Print ISSN: 0916-8516
Type of Manuscript: Special Section INVITED PAPER (Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology)
multi-gate devices,  FinFET,  SRAM,  noise margin,  

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Multi-Gate device technology is the promising candidate for the enhancement of device characteristics of the scaled MOSFETs. Moreover, independent-double-gate devices have been proposed to achieve flexible Vth adjustment. It is revealed that the SRAM noise margins have been increased by introducing the independent-double-gate FinFET.