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Independent-Double-Gate FinFET SRAM Technology
Kazuhiko ENDO Shin-ichi OUCHI Takashi MATSUKAWA Yongxun LIU Meishoku MASAHARA
IEICE TRANSACTIONS on Electronics
Publication Date: 2013/04/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology)
multi-gate devices, FinFET, SRAM, noise margin,
Full Text: FreePDF
Multi-Gate device technology is the promising candidate for the enhancement of device characteristics of the scaled MOSFETs. Moreover, independent-double-gate devices have been proposed to achieve flexible Vth adjustment. It is revealed that the SRAM noise margins have been increased by introducing the independent-double-gate FinFET.