Independent-Double-Gate FinFET SRAM Technology

Kazuhiko ENDO  Shin-ichi OUCHI  Takashi MATSUKAWA  Yongxun LIU  Meishoku MASAHARA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E96-C   No.4   pp.413-423
Publication Date: 2013/04/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E96.C.413
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
multi-gate devices,  FinFET,  SRAM,  noise margin,  

Full Text: FreePDF(2.9MB)


Summary: 
Multi-Gate device technology is the promising candidate for the enhancement of device characteristics of the scaled MOSFETs. Moreover, independent-double-gate devices have been proposed to achieve flexible Vth adjustment. It is revealed that the SRAM noise margins have been increased by introducing the independent-double-gate FinFET.