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Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions
Chenyue MA Hans Jürgen MATTAUSCH Masataka MIYAKE Takahiro IIZUKA Kazuya MATSUZAWA Seiichiro YAMAGUCHI Teruhiko HOSHIDA Akinori KINOSHITA Takahiko ARAKAWA Jin HE Mitiko MIURA-MATTAUSCH
IEICE TRANSACTIONS on Electronics
Publication Date: 2013/10/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Electronic Components
NBTI effect, interface-state, hole-trapping, modeling,
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A predictive compact model of p-MOSFET negative bias temperature instability (NBTI) degradation for circuit simulation is reported with unified description of the interface-state-generation and hole-trapping mechanisms. It is found that the hole-trapping is responsible for the initial stage of the stress degradation, and the interface-state generation dominates the degradation afterwards, especially under high stress conditions. The predictive compact model with 8 parameters enables to reproduce the measurement results of the NBTI degradation under a wide range of stress bias conditions. Finally, the developed NBTI model is implemented into the compact MOSFET model HiSIM for circuit degradation simiulation.