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Through-Silicon-Via Characterization and Modeling Using a Novel One-Port De-Embedding Technique
An-Sam PENG Ming-Hsiang CHO Yueh-Hua WANG Meng-Fang WANG David CHEN Lin-Kun WU
IEICE TRANSACTIONS on Electronics
Publication Date: 2013/10/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Emerging Technologies and Applications for Microwave and Millimeter-Wave Systems)
3D IC, TSV, de-embedding, TEGs, microwave, RF modeling,
Full Text: PDF(1.6MB)>>
In this paper, a novel and simple one-port de-embedding technique has been applied to through-silicon-via (TSV) characterization and modeling. This method utilized pad, via, and line structures to extract the equivalent circuit model of TSV. The main advantage of this de-embedding method is that it can reduce the chip area to fabricate test element groups (TEGs) for measurements while keeping S-parameter measurement accuracies. We also analyzed the electrical characteristics of substrate coupling and TSV equivalent impedance. Our results shows good agreements between measurement data and the equivalent circuit model up to 20GHz.