Bandwidth Enhanced Operation of Single Mode Semiconductor Laser by Intensity Modulated Signal Light Injection

Hiroki ISHIHARA  Yosuke SAITO  Wataru KOBAYASHI  Hiroshi YASAKA  

IEICE TRANSACTIONS on Electronics   Vol.E95-C    No.9    pp.1549-1551
Publication Date: 2012/09/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.1549
Print ISSN: 0916-8516
Type of Manuscript: BRIEF PAPER
Category: Lasers, Quantum Electronics
semiconductor lasers,  intensity modulation,  modulation bandwidth,  gain saturation,  non-linear gain,  optical injection,  

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3 dB bandwidth enhancement of single mode semiconductor lasers is confirmed numerically and experimentally when they are operated by intensity modulated signal light injection. 3 dB bandwidth is enlarged to 2.5 times of resonant frequency. The numerical analysis of rate equations predicts that the bandwidth enhancement is accomplished by the modal gain control of semiconductor lasers with injected intensity modulated signal light through non-linear gain coefficient term.