DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication

Chong JIN  Dimitris PAVLIDIS  Laurence CONSIDINE  

IEICE TRANSACTIONS on Electronics   Vol.E95-C   No.8   pp.1348-1353
Publication Date: 2012/08/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.1348
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Gallium Nitride,  Schottky diode,  varactor,  multiplier,  

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The design, fabrication and characterization of GaN based varactor diodes are presented. MOCVD was used for layer growth and the DC characteristic of 4 µm diameter diodes showed a turn-on voltage of 0.5 V, a breakdown voltage of 21 V and a modulation ratio of 1.63. High frequency characterization allowed obtaining the diode equivalent circuit and observed the bias dependence of the series resistance. The diode cutoff frequency was 900 GHz. A large-signal model was developed for the diode and the device power performance was evaluated. A power of 7.2 dBm with an efficiency of 16.6% was predicted for 47 GHz to 94 GHz doubling.