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Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure
Tadayoshi DEGUCHI Hideshi TOMITA Atsushi KAMADA Manabu ARAI Kimiyoshi YAMASAKI Takashi EGAWA
IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
AlGaN/GaN HFETs, current collapse, field plate, on-resistance,
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Current collapse of AlGaN/GaN heterostructure field-effect transistors (HFETs) formed on qualified epitaxial layers on Si substrates was successfully suppressed using graded field-plate (FP) structures. To improve the reproducibility of the FP structure manufacturing process, a simple process for linearly graded SiO2 profile formation was developed. An HFET with a graded FP structure exhibited a significant decrease in an on-resistance increase ratio of 1.16 even after application of a drain bias of 600 V.