Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure

Tadayoshi DEGUCHI  Hideshi TOMITA  Atsushi KAMADA  Manabu ARAI  Kimiyoshi YAMASAKI  Takashi EGAWA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E95-C   No.8   pp.1343-1347
Publication Date: 2012/08/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.1343
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
AlGaN/GaN HFETs,  current collapse,  field plate,  on-resistance,  

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Summary: 
Current collapse of AlGaN/GaN heterostructure field-effect transistors (HFETs) formed on qualified epitaxial layers on Si substrates was successfully suppressed using graded field-plate (FP) structures. To improve the reproducibility of the FP structure manufacturing process, a simple process for linearly graded SiO2 profile formation was developed. An HFET with a graded FP structure exhibited a significant decrease in an on-resistance increase ratio of 1.16 even after application of a drain bias of 600 V.