For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W
Noboru NEGORO Masayuki KURODA Tomohiro MURATA Masaaki NISHIJIMA Yoshiharu ANDA Hiroyuki SAKAI Tetsuzo UEDA Tsuyoshi TANAKA
IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
AlGaN/GaN MIS-HFET, K-band, power amplifier, Si substrate, high-temperature chemical vapor deposition SiN,
Full Text: PDF>>
High output power AlGaN/GaN metal-insulator-semiconductor (MIS) hetero-junction field effect transistor (HFET) on Si substrate for millimeter-wave application has developed. High temperature chemical vapor deposition (HT-CVD) grown SiN as a gate insulator improves the breakdown characteristics which enables the operation at high drain voltage of 55 V. The device exhibits high drain current of 1.1 A/mm free from the current collapse and high RF gain of 10.4 dB. The amplifier module developed AlGaN/GaN MIS-HFET with the gate width of 5.4 mm exhibits an output power of 10.7 W and a linear gain of 4 dB at 26.5 GHz. The resultant high output power is very promising for long-distance communication at millimeter-wave in the future which would enable high speed and high density data transmission.