Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process

Yutaro YAMAGUCHI  Takeshi SAGAI  Yasuyuki MIYAMOTO  

IEICE TRANSACTIONS on Electronics   Vol.E95-C   No.8   pp.1323-1326
Publication Date: 2012/08/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.1323
Print ISSN: 0916-8516
Type of Manuscript: BRIEF PAPER
Category: III-V High-Speed Devices and Circuits
heterojunction bipolar transistor,  InP,  base-collector capacitance,  transferred-substrate,  heterogeneous integration,  

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With the aim of achieving heterogeneous integration of compound semiconductors with silicon technology, the fabrication of an InP/InGaAs transferred-substrate HBT (TS-HBT) on a Si substrate is reported. A current gain of 70 and a maximum current density of 12.3 mA/µm2 were confirmed in a TS-HBT with a 340-nm-wide emitter. From microwave characteristics of the TS-HBT obtained after de-embedding, a cutoff frequency (fT) of 510 GHz and a 26% reduction of the base-collector capacitance were estimated. However, the observed fT was too high for an HBT with a 150-nm-thick collector. This discrepancy can be explained by the error in de-embedding, because an open pad is observed to have large capacitance and strong frequency dependence due to the conductivity of the Si substrate.