Effect of Dimethylselenium Supply Rate on Growth of Cu(In, Ga)Se2 Films

Masahiro TAHASHI  Kenji IINUMA  Hideo GOTO  Kenji YOSHINO  Makoto TAKAHASHI  Toshiyuki IDO  

IEICE TRANSACTIONS on Electronics   Vol.E95-C   No.7   pp.1304-1306
Publication Date: 2012/07/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.1304
Print ISSN: 0916-8516
Type of Manuscript: BRIEF PAPER
Category: Semiconductor Materials and Devices
copper indium gallium diselenide,  selenization,  crystal growth,  dimethylselenium,  

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Polycrystalline Cu(In,Ga)Se2 (CIGS) films were prepared by heat treatment of metallic precursors using dimethylselenium (Se(CH3)2), which is a less hazardous Se source than H2Se gas. CIGS films were fabricated at various Se(CH3)2 supply rates. We investigated the effect of the Se(CH3)2 supply rate on the crystal phase and surface morphology of the films.