A 315 MHz Power-Gated Ultra Low Power Transceiver in 40 nm CMOS for Wireless Sensor Network

Lechang LIU
Takayasu SAKURAI

IEICE TRANSACTIONS on Electronics   Vol.E95-C    No.6    pp.1035-1041
Publication Date: 2012/06/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.1035
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
injection lock,  power gating,  low noise amplifier,  ultra low power,  

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A 315 MHz power-gated ultra low power transceiver for wireless sensor network is developed in 40 nm CMOS. The developed transceiver features an injection-locked frequency multiplier for carrier generation and a power-gated low noise amplifier with current second-reuse technique for receiver front-end. The injection-locked frequency multiplier implements frequency multiplication by edge-combining and thereby achieves 11 µW power consumption at 315 MHz. The proposed low noise amplifier achieves the lowest power consumption of 8.4 µW with 7.9 dB noise figure and 20.5 dB gain in state-of-the-art designs.