A 180-µW, 120-MHz, Fourth Order Low-Pass Bessel Filter Based on FVF Biquad Structure

Hundo SHIN  Seung-Tak RYU  

IEICE TRANSACTIONS on Electronics   Vol.E95-C   No.5   pp.949-957
Publication Date: 2012/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.949
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Electronic Circuits
flipped voltage follower (FVF),  source follower (SF),  Gm-C filter,  biquad structure,  power/BW ratio (PBWR),  Bessel filter,  

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This paper proposes a new biquad structure based on a flipped voltage follower (FVF) for low-power and wide-bandwidth (BW) low pass filter. The proposed biquad structure consists of an FVF and a source follower (SF) for complex pole pair generation and zero cancellation. The presented design provides good linearity at low power consumption, owing to the voltage follower structures. A power/BW ratio (PBWR) is suggested as a performance metric to compare power efficiency to bandwidth, and the proposed biquad structure shows excellent PBWR, especially for low quality factor (Q) design. As a prototype, a fourth order Bessel filter was fabricated in 0.18 µm CMOS technology. The measured BW, power consumption, IIP3, and FoM are 120 MHz, 180 µW, 15 dBm, and 0.34 fJ, respectively.