Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode

Masanari FUJITA  Mitsufumi SAITO  Michihiko SUHARA  

IEICE TRANSACTIONS on Electronics   Vol.E95-C   No.5   pp.871-878
Publication Date: 2012/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.871
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
spintronics,  spin-splitting,  RTD,  InSb/AlInSb,  Rashba effect,  

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In this paper, we analyze current-voltage characteristics of InSb/AlInSb triple-barrier resonant tunneling diodes (TBRTDs) with spin-splitting under zero magnetic fields. The InSb has very small effective mass, thus we can obtain large spin-splitting by Rashba spin-orbit interaction due to asymmetric InSb/AlInSb quantum wells. In our model, broadening of each resonant tunneling level and spin-splitting energy can be considered to calculate spin-polarized resonant tunneling current.