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Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM
Yuto NORIFUSA Tetsuo ENDOH
IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Vertical type 1T-DRAM, planar type 1T-DRAM, floating body DRAM, retention,
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The performances of the conventional planar type 1T DRAM and the Vertical type 1T DRAM are compared based on structure difference using a fully-consistent device simulator. We discuss the structural advantage of the Vertical type 1T-DRAM in comparison with the conventional planar type 1T-DRAM, and evaluate their performance in each operating mode such as write, erase, read, and hold; and discuss its cell performances such as Cell Current Margin and data retention. These results provide a useful guideline designing the high performance Vertical type 1T-DRAM cell.