Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM

Yuto NORIFUSA  Tetsuo ENDOH  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E95-C   No.5   pp.847-853
Publication Date: 2012/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.847
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Vertical type 1T-DRAM,  planar type 1T-DRAM,  floating body DRAM,  retention,  

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Summary: 
The performances of the conventional planar type 1T DRAM and the Vertical type 1T DRAM are compared based on structure difference using a fully-consistent device simulator. We discuss the structural advantage of the Vertical type 1T-DRAM in comparison with the conventional planar type 1T-DRAM, and evaluate their performance in each operating mode such as write, erase, read, and hold; and discuss its cell performances such as Cell Current Margin and data retention. These results provide a useful guideline designing the high performance Vertical type 1T-DRAM cell.