Beating Analysis of Shubnikov de Haas Oscillation in In0.53Ga0.47As Double Quantum Well toward Spin Filter Applications

Takaaki KOGA  Toru MATSUURA  Sébastien FANIEL  Satofumi SOUMA  Shunsuke MINESHIGE  Yoshiaki SEKINE  Hiroki SUGIYAMA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E95-C   No.5   pp.770-776
Publication Date: 2012/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.770
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
quantum well,  spin-orbit interaction,  Shubnikov de Haas oscillation,  Rashba effect,  spin filter,  

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Summary: 
We recently determined the values of intrinsic spin-orbit (SO) parameters for In0.52Al0.48As/In0.53Ga0.47As(10 nm)/In0.52Al0.48As (InGaAs/InAlAs) quantum wells (QW), lattice-matched to (001) InP, from the weak localization/antilocalization analysis of the low-temperature magneto-conductivity measurements [1]. We have then studied the subband energy spectra for the InGaAs/InAlAs double QW system from beatings in the Shubnikov de Haas (SdH) oscillations. The basic properties obtained here for the double QW system provides useful information for realizing nonmagnetic spin-filter devices based on the spin-orbit interaction [2].