High-Frequency Precise Characterization of Intrinsic FinFET Channel

Hideo SAKAI  Shinichi O'UCHI  Takashi MATSUKAWA  Kazuhiko ENDO  Yongxun LIU  Junichi TSUKADA  Yuki ISHIKAWA  Tadashi NAKAGAWA  Toshihiro SEKIGAWA  Hanpei KOIKE  Kunihiro SAKAMOTO  Meishoku MASAHARA  Hiroki ISHIKURO  

IEICE TRANSACTIONS on Electronics   Vol.E95-C    No.4    pp.752-760
Publication Date: 2012/04/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.752
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
FinFET,  SOI,  De-embedding,  RF,  device modeling,  

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This paper presents a precise characterization of high-frequency characteristics of intrinsic channel of FinFET. For the de-embedding of the parasitics attached to the source, drain and gate terminals, it proposes special calibration patterns which can place the reference surface just beside the intrinsic part of the FinFET. It compares the measured S parameter data up to 40 GHz with the device simulation and shows good matching. The experimental data of the through pattern also confirms the accuracy of the de-embedded parasitics and extracted intrinsic part of FinFET.