Publication IEICE TRANSACTIONS on ElectronicsVol.E95-CNo.4pp.752-760 Publication Date: 2012/04/01 Online ISSN: 1745-1353 DOI: 10.1587/transele.E95.C.752 Print ISSN: 0916-8516 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: FinFET, SOI, De-embedding, RF, device modeling,
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Summary: This paper presents a precise characterization of high-frequency characteristics of intrinsic channel of FinFET. For the de-embedding of the parasitics attached to the source, drain and gate terminals, it proposes special calibration patterns which can place the reference surface just beside the intrinsic part of the FinFET. It compares the measured S parameter data up to 40 GHz with the device simulation and shows good matching. The experimental data of the through pattern also confirms the accuracy of the de-embedded parasitics and extracted intrinsic part of FinFET.