6 W/25 mm2 Wireless Power Transmission for Non-contact Wafer-Level Testing

Andrzej RADECKI  Hayun CHUNG  Yoichi YOSHIDA  Noriyuki MIURA  Tsunaaki SHIDEI  Hiroki ISHIKURO  Tadahiro KURODA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E95-C   No.4   pp.668-676
Publication Date: 2012/04/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.668
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
inductive coupling,  inductive power transfer,  wafer-level testing,  

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Summary: 
Wafer-level testing is a well established solution for detecting manufacturing errors and removing non-functional devices early in the fabrication process. Recently this technique has been facing a number of challenges, resulting from increased complexity of devices under test, larger number and higher density of pads or bumps, application of mechanically fragile materials, such as low-k dielectrics, and ever developing packaging technologies. Most of these difficulties originate from the use of mechanical probes, as they limit testing speed, impose performance limitations and add reliability issues. Earlier work focused on relaxing these constraints by removing mechanical probes for data transmission and DC signal measurement and replacing them with non-contact interfaces. In this paper we extend this concept by adding a capability of transferring power wirelessly, enabling non-contact wafer-level testing. In addition to further improvements in the performance and reliability, this solution enables new testing scenarios such as probing wafers from their backside. The proposed system achieves 6 W/25 mm2 power transfer density over a distance of up to 0.32 mm, making it suitable for non-contact wafer-level testing of medium performance CMOS integrated circuits.